Gary Hilson, EEtimes, TORONTO, Sept. 12, 2018 – With the automotive market presenting potential opportunities of ever-emerging memories such as ferroelectric RAM (FRAM), magnetoresistive RAM (MRAM), ...

This work presents dose rate and neutron testing on a ferroelectric random-access memory (FRAM) device in dynamic operation during radiation pulses. Radiation failure modes are shown to be unique.

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